Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

170A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

68 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Voltage - Rated DC  

75V

Current Rating  

180A

Lead Pitch  

2.54mm

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

29 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

7600pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

260nC @ 10V

Rise Time  

120ns

Vgs (Max)  

±20V

Fall Time (Typ)  

74 ns

Continuous Drain Current (ID)  

180A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

75A

Drain-source On Resistance-Max  

0.0045Ohm

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

720A

Dual Supply Voltage  

75V

Nominal Vgs  

4 V

Height  

4.82mm

Length  

10.6426mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free